Metal-Semiconductor Contacts Induce the Charge-Transfer Mechanism of Surface-Enhanced Raman Scattering

Content Advisory

Please be aware that this content contains descriptions of violence that may be distressing to some viewers.
NCJ Number
304214
Journal
Journal of Physical Chemistry C Volume: 115 Issue: 37 Dated: 2011 Pages: 18378-18383
Date Published
2011
Length
6 pages
Annotation

Using a model metal–semiconductor–molecule–metal assembly  designed for probing the charge-transfer (CT) mechanism of surface-enhanced Raman scattering (SERS), the current project measured the SERS of ZnO–PATP–Ag, Au–ZnO–PATP–Ag, and Cu–ZnO–PATP–Ag assemblies at excitation wavelengths of 514.5, 785, and 1064 nm.

 

Abstract

The results demonstrate that the metal–semiconductor contact can alter the charge distribution through p-aminothiophenol (PATP) molecules. This is attributed to the chemical SERS enhancement mechanism with additional electrical transport properties within these assemblies. These inhibit the CT from the metal to the molecule, resulting in the different degrees to which CT contributes to the overall SERS enhancement of PATP. (publisher abstract modified)

Grant Number(s)
2006-DN-BX-K034
Agencies
NIJ-Sponsored
Publication Type
Research (Applied/Empirical)
Date Published: January 1, 2011